【大学频道】中国科学院固体物理研究所呈献 | 北京计算科学研究中心魏苏淮教授

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题   目：Theoretical Study of Defect Properties in Semiconductors报告人：魏苏淮单   位：北京计算科学研究中心

时   间：2019-11-06

地   点：中国科学院固体物理研究所

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报告摘要

In this talk, I will first discuss some general concepts of defects in semiconductors and discuss in detail the first-principles defect calculation methods based on supercell approach; then I will discuss the origin of the doping difficulties in semiconductor materials and the approaches one may use to overcome the doping bottleneck in these materials, including (1) how to increase defect solubility by "defeating" defect thermodynamics using non-equilibrium approaches; (2) how to reduce defect ionization energy level by designing shallower dopants or dopant complexes; and (3) how to reduce defect compensation and ionization level by modifying the host band structure near the band edges.

个人简介

Professor Su-Huai Wei is a Professor at the Beijing Computational Science Research Center (CSRC). He is a Fellow of both the American Physical Society and The Materials Research Society. He received his B.S. in Physics from Fudan University in 1981 and Ph.D. from the College of William and Mary in 1985. He joined the Solar Energy Research Institute (it is now National Renewable Energy Laboratory) in 1985 as a postdoctoral researcher and later became Staff Scientist, Senior Scientist, Principal Scientist, Manager of the Theoretical Materials Science Group, and he joined the CSRC in 2015. 

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